| 1. | And a new numerical charge - sheet model for sic mos inversion layers is presented based on an numerical solution of a one - dimension poisson equation
文中还提出了一个新的sicmosfet反型层薄层电荷数值模型。 |
| 2. | Finally , the electron mobility in 6h - sic inversion layers is studied by single - particle monte carlo technique . the simulation results fit the experimental data very well
对6h sic反型层迁移率进行的moniecaro模拟结果表明，库仑中心的相关性，库仑电荷量及电荷中心和sic侣。 |
| 3. | A model of the sic pn junctions irradiated by neutron is presented . the effects of radiation induced oxide trapped charge and sic / si02 interface state density on inversion layer mobility is studied systematically
在辐照的电离效应方面，研究了辐照在sicmos氧化层中引入的陷阱电荷对mos沟道反型层迁移率的影响。 |
| 4. | Then , a comprehensive an ~ tlyticai model for coulomb scattering in 6h - sic inversion layers is presented considering all the coulomb effects of the charged - centers near the sicisio2 interface . this model takes into account the effects of the charged - centers correlation
当有效横向电场较低时，库仑散射在sic反型层的电子输运中起主要散射作用，而当有效横向电场升高时，表面粗糙散射的作用会变得愈来愈显著。 |
| 5. | In this paper , the subband structure in the inversion layer is constructed by solving the self - consistent schr ? dinger equation , thus the carrier effective mass and scattering rate can be obtained . furthermore , taking account for the carrier density in each subband , we establish carrier mobility model in strained - si mosfet
本文通过求解自洽薛定谔方程,确定了应变硅mosfet反型层的子能带结构,在此基础上经进一步计算得到子能带内载流子的有效质量和散射几率,综合考虑各子能带上的载流子的浓度分布,建立了应变硅mosfet载流子迁移率的解析模型。 |
| 6. | In this paper , the effect of interface properties of sio2 / sic on performances of n - channel sic mofet are studied systematically : incomplete ionization of impurity in sic is analyzed based on the crystal structure of sic materials . the effect of incomplete ionization of impurity on c - v characteristics of p - type 6h - sic mos is researched based on charge - sheet model for sic mos inversion layers
本文就sio _ 2 / sic界面质量对n沟sicmosfet性能的影响做了深入的研究：从碳化硅材料的晶体结构出发分析了碳化硅材料中杂质的不完全离化，采用sicmos反型层薄层电荷数值模型，研究了杂质不完全离化对p型6h - sicmosc - v特性的影响。 |
| 7. | The study shows that coulomb scattering becomes more important at low transverse - electric field and both the density and the distribution of charged - centers play an important role in el ectron transport in sic inversion layers . the radiation response and electric characteristics of 6h - sic mos structure is studied with experiment for the first time
在实验上首次对6h sicmos结构的电特性及其辐照引起的电参数退化进行了研究，结果说明：在氧化层电场较高时是fowler nordheim隧穿电流决定着sicmos结构的漏电流。 |
